http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007251168-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/D06B3-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/D06C7-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/D06B3-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2007-03-12^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef9fb8eeff121a998c801c3261425bec |
| publicationDate | 2007-09-27^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007251168-A |
| titleOfInvention | Light emitting device and manufacturing method thereof |
| abstract | Disclosed is a light emitting device capable of reducing propagation of dislocations generated from a substrate, facilitating carrier supply, and enhanced ESD (electrostatic discharge) characteristics, and a method of manufacturing the same. I will provide a. The light emitting device of the present invention includes a first electrode, a first conductive type nitride semiconductor layer on the first electrode, and an active layer on the first conductive type semiconductor layer. A second conductivity type nitride semiconductor layer 160 on the active layer 150; a second electrode 190 on the second conductivity type nitride semiconductor layer 160; a first conductivity type nitride semiconductor layer 140; an active layer; 150 and the substrate 110 formed on the side surface of the nitride semiconductor layer 160 of the second conductivity type. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009123720-A |
| priorityDate | 2006-03-13^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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