| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2008-08-01^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88fa48abd461f627af5f18464a4024d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3fe79e6f4f03704344434a8a4f530f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbf97efd025d280cdc73dd2fecf88837
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3fcf601d3c982647edb04227554ebd4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9854e3e445238b3183f194c11719fac |
| publicationDate |
2009-03-19^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009060095-A |
| titleOfInvention |
Display device and electronic apparatus including the display device |
| abstract |
An object is to propose a display device including a thin film transistor which has high electrical characteristics and can reduce off-state current. A substrate, a gate electrode provided on the substrate, a gate insulating film provided on the gate electrode, a microcrystalline semiconductor film provided on the gate electrode through the gate insulating film, and a microcrystal A channel protective layer provided in contact with the semiconductor film, an amorphous semiconductor film provided on a side surface of the microcrystalline semiconductor film and the channel protective layer on the gate insulating film, and the amorphous semiconductor film A thin film transistor including an impurity semiconductor layer and a source electrode and a drain electrode provided on and in contact with the impurity semiconductor layer, wherein the amorphous semiconductor film has a thickness greater than that of the microcrystalline semiconductor film Have. [Selection] Figure 4 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020036036-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100130098-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013008956-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101578694-B1 |
| priorityDate |
2007-08-07^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |