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filingDate 2008-02-28^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc9b1caf01b37b10b8f0f5b0049cf5e2
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publicationDate 2009-09-10^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009206314-A
titleOfInvention Single-sided resin-encapsulated semiconductor device
abstract The present invention provides a single-side resin-encapsulated semiconductor device that is extremely stable with little warpage in all processes from room temperature to solder reflow, and has excellent mountability and reliability after mounting. In a semiconductor device in which a semiconductor element is mounted on one surface of a substrate and only one surface on the substrate surface side on which the semiconductor element is mounted is sealed with a resin composition, the resin composition is a cured product thereof. Glass transition temperature Tg (° C.), thermal expansion coefficient α1 (ppm / ° C.) of Tg or less, thermal expansion coefficient α2 (ppm / ° C.) of Tg or more, and thickness t (μm) of the sealing material part as manufacturing conditions , Normal temperature Troom (° C.), and reflow temperature Treflow (° C.): , 200 <t <800)... A single-side resin-encapsulated semiconductor device using a resin composition that satisfies the relationship represented by (1). [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014063888-A
priorityDate 2008-02-28^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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