http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009503897-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 2006-07-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-01-29^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009503897-A |
| titleOfInvention | Phase change memory cell and formation method |
| abstract | Phase change memory devices and methods of forming the same are provided. The memory element includes a first electrode (12) and a chalcogenide including a phase change material layer (18) on the first electrode. A metal-chalcogenide layer (20) is on the phase change material layer. The metal chalcogenide layer is tin telluride. The second electrode (24) is on the metal chalcogenide layer. The memory element is configured to reduce the required current. [Selection] Figure 1 |
| priorityDate | 2005-08-02^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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