http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010258052-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4af0df9a26ff4aafde7285cbd8eb12f4 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18391 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04257 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2635 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 2009-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26f02e4fe30cf7be62a7e4ab1475fc3b |
| publicationDate | 2010-11-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2010258052-A |
| titleOfInvention | Burn-in method for surface emitting semiconductor laser device and program thereof |
| abstract | A method of burning in a surface emitting semiconductor laser element in a short time and at a low cost is provided. A burn-in method for a surface emitting semiconductor laser device includes a step of applying a stress current for applying a thermal load to the surface emitting semiconductor laser device (step S104), and a surface emitting semiconductor to which the stress current is applied. A step of applying a measurement current to the laser element to measure the amount of light of the surface-emitting type semiconductor laser element (step S105), and a step of determining pass / fail of the surface-emitting type semiconductor laser element based on the measurement result (step S106). Have The stress current is larger than the drive current when the amount of light emitted from the surface emitting semiconductor laser element changes from increasing to decreasing (thermal rollover driving current), and failure when the surface emitting semiconductor laser element fails Less than current. [Selection] Figure 7 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018207008-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017130509-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021015972-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015505163-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021121025-A |
| priorityDate | 2009-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID89859 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522218 |
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