| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B7-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2222 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02375
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-06226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B7-127 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| filingDate |
2009-06-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_184b79e6c6f142cb476b43664272c0b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fcfb8235f3e5ea4dc34cec7b3da6055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fd7bedb1ab6e5a7f76384e9e1520256 |
| publicationDate |
2011-01-13^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011009610-A |
| titleOfInvention |
Nitride semiconductor laser device and wafer |
| abstract |
The present invention provides a nitride semiconductor laser device having a reduced capacitance and improved responsiveness. A nitride semiconductor laser device includes an active layer, an upper cladding layer that is stacked above the active layer, a low dielectric constant insulating film that is stacked above the upper cladding layer, And a pad electrode 23 laminated above the low dielectric constant insulating film 22. [Selection] Figure 1 |
| priorityDate |
2009-06-29^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |