http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011049419-A

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Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02N2-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02N2-00
filingDate 2009-08-28^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_148322646de6d2682bd9678575c0bb23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84ff3488e2bf9b2ca73b0ab4325dc452
publicationDate 2011-03-10^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2011049419-A
titleOfInvention Method for manufacturing piezoelectric device
abstract An object of the present invention is to provide a method for manufacturing a piezoelectric device capable of recovering oxygen deficient portions generated in a piezoelectric layer by plasma during etching and improving the performance of the piezoelectric device. To do. A method of manufacturing a piezoelectric device according to the present invention includes a step of forming a lower electrode layer, a piezoelectric layer, and an upper electrode layer over a semiconductor substrate, the upper electrode layer, and a piezoelectric body. An etching process for etching the layer 24 and the lower electrode layer 23, and oxygen 28 is recombined with the oxygen deficient portion 27 formed on the surface of the piezoelectric layer 24 by the etching process, so that the piezoelectric layer 24 A process for recovering the piezoelectric characteristics is provided, and the recovery process is performed at a temperature equal to or lower than the Curie temperature of the piezoelectric layer 24. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015045845-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2015045845-A1
priorityDate 2009-08-28^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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