http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011049419-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02N2-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02N2-00 |
filingDate | 2009-08-28^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_148322646de6d2682bd9678575c0bb23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84ff3488e2bf9b2ca73b0ab4325dc452 |
publicationDate | 2011-03-10^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2011049419-A |
titleOfInvention | Method for manufacturing piezoelectric device |
abstract | An object of the present invention is to provide a method for manufacturing a piezoelectric device capable of recovering oxygen deficient portions generated in a piezoelectric layer by plasma during etching and improving the performance of the piezoelectric device. To do. A method of manufacturing a piezoelectric device according to the present invention includes a step of forming a lower electrode layer, a piezoelectric layer, and an upper electrode layer over a semiconductor substrate, the upper electrode layer, and a piezoelectric body. An etching process for etching the layer 24 and the lower electrode layer 23, and oxygen 28 is recombined with the oxygen deficient portion 27 formed on the surface of the piezoelectric layer 24 by the etching process, so that the piezoelectric layer 24 A process for recovering the piezoelectric characteristics is provided, and the recovery process is performed at a temperature equal to or lower than the Curie temperature of the piezoelectric layer 24. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015045845-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2015045845-A1 |
priorityDate | 2009-08-28^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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