| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32507 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 |
| filingDate |
2010-04-07^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7b50d106f43e3ccc753770dd5dde237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f6e5124f6d8683e72ae180790dc7a6b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5de47ebc353ee4772f7314a986c3011c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4222e5f6b401c19a69c10fbdc1b57a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_480af8f93464c297112585d69afda41f |
| publicationDate |
2011-11-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011222675-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
A semiconductor device and a method for manufacturing the same that can improve yield while ensuring high heat dissipation. A semiconductor laser 1 is mounted on a submount 12 via a solder 11 in a junction-down manner. The semiconductor laser 1 includes an n-type GaN substrate 2, a semiconductor multilayer structure 3 formed on the n-type GaN substrate 2 and including a pn junction, and an electrode 8 formed on the semiconductor multilayer structure 3. The electrode 8 is joined to the submount 12 via the solder 11. A refractory metal film 10 is disposed between the submount 12 and the semiconductor multilayer structure 3 so as to surround the electrode 8. [Selection] Figure 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015138870-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023182156-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6512375-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11411369-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018085442-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7135482-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020174949-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7324665-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019193643-A1 |
| priorityDate |
2010-04-07^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |