http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012033849-A

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publicationDate 2012-02-16^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012033849-A
titleOfInvention Silicon device structure and sputtering target material used for forming the same
abstract A saturation mobility characteristic of a silicon device is improved. On the A silicon semiconductor film, a P-doped n + -type amorphous silicon film, a silicon device structures having the wiring and formed on the P-doped n + -type amorphous silicon film, the wiring, the P-doped It consists of a silicon oxide film formed on the surface of the n + -type amorphous silicon film and a copper alloy film. The copper alloy film has an Mn of 1 atomic% or more and 5 atomic% or less and 0.05 atomic% or more and 1.0. This is a film formed by sputtering a copper alloy containing P of atomic% or less. [Selection] Figure 1
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