| abstract |
The cured film as a resist underlayer film has excellent storage stability, high adhesion to the resist film, excellent etching selectivity with respect to the resist film and the substrate to be processed, and low reflectivity. It aims at providing the composition for resist underlayer film formation which can exhibit pattern formation property. The present invention provides [A] polysiloxane, [B] a compound represented by the following formula (1), [C] A resist underlayer film forming composition containing an organic acid and [D] an organic solvent. (In Formula (1), each R 1 is independently a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or a hydroxyalkyl group having 1 to 8 carbon atoms. A b- is a b-valent organic acid. An anion, b is 1 or 2) [Selection figure] None |