| abstract |
A back-illuminated image sensor capable of achieving both high pupil division performance and high sensitivity is provided. Backside irradiation for reading a signal corresponding to a charge generated in the PD by light incident on a photoelectric conversion region (PD) in the substrate from the back side of the silicon substrate from the front side of the substrate. The imaging device 100 includes a pupil division pair including two pupil division pixel units 11 and 12 arranged adjacent to each other in the pupil division direction (row direction X). Each of the pupil division pixel units 11 and 12 includes: , Including the PD 21 formed in the substrate S, the cross-sectional shape of the PD 21 included in each of the pupil division pixel units 11 and 12 is axisymmetric with respect to the boundary of the pupil division pixel units 11 and 12. The width of the PD 21 included in each of the pupil division pixel portions 11 and 12 in the pupil division direction is narrow on the back surface side of the substrate S and wide on the front surface side of the substrate S. [Selection] Figure 2 |