| abstract |
Particles generated on a semiconductor substrate are reduced, and deterioration of electrical characteristics of a semiconductor device is prevented. According to this embodiment, a method for supercritical drying of a semiconductor substrate includes a step of introducing a semiconductor substrate on which a metal film is formed into a chamber in a state where the surface is wet with alcohol; A step of supplying a supercritical fluid of carbon dioxide; and a step of replacing the chemical solution on the semiconductor substrate with the supercritical fluid by setting the temperature in the chamber to a predetermined temperature of 75 ° C. or higher and lower than the critical temperature of the alcohol. And discharging the supercritical fluid and the alcohol from the chamber and reducing the pressure in the chamber while maintaining the temperature in the chamber at the predetermined temperature. [Selection] Figure 4 |