| abstract |
A semiconductor device in which variation in electrical characteristics due to miniaturization hardly occurs is provided. An oxide semiconductor film including a first region and a pair of second regions facing each other with the first region interposed therebetween, a gate insulating film provided over the oxide semiconductor film, and gate insulation A first electrode that is provided over the film and overlaps with the first region, and the first region is a non-single-crystal oxide semiconductor region having a c-axis aligned crystal part, The pair of second regions is an oxide semiconductor region including a dopant and having a plurality of crystal parts. [Selection] Figure 1 |