http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012533179-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2018 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate | 2010-07-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-12-20^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2012533179-A |
| titleOfInvention | Structure for improving the mirror cleavage yield of (Ga, Al, In, B) N laser diodes grown on nonpolar or semipolar (Ga, Al, In, B) N substrates |
| abstract | A structure for improving the mirror cleavage yield of (Ga, Al, In, B) N laser diodes grown on nonpolar or semipolar (Ga, Al, In, B) N substrates. The structure provides a waveguide core that provides sufficient optical confinement for device operation in the absence of a p-type doped aluminum-containing waveguide cladding layer, and to assist in cleaving along specific crystal planes. A nonpolar or semipolar (Ga, Al, In, B) N laser diode comprising one or more n-type doped aluminum-containing layers that can be used. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017524252-A |
| priorityDate | 2009-07-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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