| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0623 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0623 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2011-06-27^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5083511aeef16853618b44808fd70f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6e61c8569c032f58525d802e4e83f69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_652889f5c813b257db718f72782cbfae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02d0ec9f94216fc8b72126451aefef62 |
| publicationDate |
2013-01-10^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013008890-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
A semiconductor device having high channel mobility and a method for manufacturing the same are provided. The substrate has a surface SR made of a semiconductor having a hexagonal single crystal structure of polytype 4H. The surface SR of the substrate is a first surface S1 having a surface orientation (0-33-8), and a second surface having a surface orientation that is connected to the first surface S1 and different from the surface orientation of the first surface S1. S2 and this are provided alternately. The gate insulating film is provided on the surface SR of the substrate. The gate electrode is provided on the gate insulating film. [Selection] Figure 3 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10192960-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9490319-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014199748-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014183274-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014139967-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015012019-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015026727-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9680006-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104885226-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7230477-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014148129-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020096083-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014112233-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9276106-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014241368-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014239146-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015026726-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015012009-A1 |
| priorityDate |
2011-06-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |