| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b84a2e2bcc8c875734733c2afe72fe1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| filingDate |
2012-12-11^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c844da52633540fbfe9a26ddd1195131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc5a52bcead07d589cb7416e329f2a13 |
| publicationDate |
2013-07-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013140956-A |
| titleOfInvention |
In-situ grown gate dielectric and field plate dielectric |
| abstract |
A method and apparatus for providing a heterostructure field effect transistor (HFET) having a high quality gate dielectric and field plate dielectric. A gate dielectric and a field plate dielectric are deposited in-situ on a semiconductor surface. The location of the gate electrode 118 may be defined by etching the first pattern in the field plate dielectric 110 and using the gate dielectric 108 as an etch stop. Alternatively, an additional etch stop layer may be deposited in-situ between the gate dielectric 108 and the field plate dielectric 110. After etching the first pattern, a conductive material may be deposited and patterned to define the gate electrode 118. A source electrode 112 and a drain electrode 114 that are in electrical contact with the semiconductor surface are formed on both sides of the gate electrode 118. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019071497-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019532842-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013247196-A |
| priorityDate |
2011-12-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |