| abstract |
The present invention provides a peeling method with less generation of defects on a semiconductor thin film in the manufacture of a substrate with a thin film, for example, an SOI substrate. A step of preparing a semiconductor substrate and an insulating substrate; and a step of implanting hydrogen ions, rare gas ions, or both ions from the surface of the semiconductor substrate to form an ion implantation layer in the semiconductor substrate; Applying a surface activation treatment to at least one of the surfaces to be bonded before bonding the surface of the semiconductor substrate into which the ions are implanted and the surface of the insulating substrate; and Bonding the surface implanted with the surface of the insulating substrate, applying heat treatment to the surface of the semiconductor substrate and insulating substrate bonded, and after applying the heat treatment, the ions The ion implantation layer is mechanically peeled off by applying a mechanical impact while applying vibration to the implantation layer, and the semiconductor thin film is transferred to the insulating substrate. And peeling the transfer step that provides at least comprises manufacturing method for thin-film substrate. [Selection] Figure 1 |