| abstract |
In a nitride semiconductor laser element using a semipolar substrate, a voltage of the semiconductor laser device can be reduced when energized, and a semiconductor laser device excellent in reliability is provided. A first clad layer made of a first conductivity type In x1 Al y1 Ga 1-x1-y1 N (x1> 0, y1> 0) is formed on a semipolar plane of a semiconductor substrate. A light emitting layer is formed on the cladding layer. Then, a second cladding layer made of the second conductivity type In x2 Al y2 Ga 1-x2-y2 N (0 ≦ x2 ≦ 0.02, 0.03 ≦ y2 ≦ 0.07) is formed on the light emitting layer. Thus, a nitride-based semiconductor laser device is configured. [Selection] Figure 1 |