| abstract |
A method for controlling the conductivity of (Al, In, Ga, B) N is provided. A method for controlling p-type conductivity in an (Al, In, Ga, B) N semiconductor crystal is disclosed. For example, it includes a {1011} GaN film deposited on a {100} MgAl 2 O 4 spinel substrate miscut in the <011> direction. The p-type conductivity may be brought about by intentionally encapsulating Mg atoms in the growing semipolar nitride thin film and introducing a usable electronic state into the band structure of the semiconductor crystal. Other impurity atoms such as Zn or C may be used that provide similar inclusion of suitable electronic states. [Selection] Figure 1 |