http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013518445-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-225 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate | 2011-01-27^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-05-20^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013518445-A |
| titleOfInvention | Normally-off gallium nitride based semiconductor devices |
| abstract | The method includes forming (604) a relaxed layer (106, 506) in a semiconductor device (100, 500). The method also includes forming (606) a tensile layer (108, 510) on the relaxed layer, the tensile layer having a tensile stress. The method further includes forming a compression layer (110, 508) on the relaxed layer, the compression layer having a compressive stress. The compression layer has a piezoelectric polarization that is approximately equal to or greater than the spontaneous polarization of the relaxed, tensile, and compression layers. The piezoelectric polarization of the compression layer may be in the opposite direction to the spontaneous polarization of the compression layer. The relaxed layer may include gallium nitride, the tensile layer may include aluminum gallium nitride, and the compression layer may include aluminum indium gallium nitride. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017063172-A |
| priorityDate | 2010-01-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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