| abstract |
The present invention relates to a nanowire made of or containing a semiconductor material and used for photovoltaic and electronic applications and a method for producing the same. Nanowires are characterized by being obtained by a novel method using a novel precursor. A precursor represents a compound or a mixture of compounds each having at least one Si—Si direct bond and / or Ge—Si direct bond and / or Ge—Ge direct bond, the substituents comprising halogen and / or hydrogen. In the composition, the atomic ratio of substituents to metalloid atoms is at least 1: 1. |