http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014074641-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc45703f67bc72a6db582867886fd5d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3b96fcd27eca0c8082a6473515811a00
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F16C17-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F16C41-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F16C19-52
filingDate 2012-10-04^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_666dba4ec5258861e21965c0490212f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ce0ccbdd7d5d68127d3a87698ee3bc0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_105c5d3b30f132cdbc87f3077d253092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cf75529f765aa0280734ce52f1bfc60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20e920d277f5e55ef764e1a367ca9e9c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_944b6128b92f82e36a0508e8f9a7ef3e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16b7c2f568c97e66f05e5a8dcc6804ad
publicationDate 2014-04-24^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2014074641-A
titleOfInvention Physical quantity detection device
abstract In a physical quantity detection device, a physical quantity can be detected under a higher pressure. In a physical quantity detection device 1 provided with a sensitive layer 12 provided on a bearing 22 for detecting a physical quantity, an oxide film 13 and a silicon nitride film 14 are provided on the sensitive layer 12 in order from the sensitive layer 12 side. Since the silicon nitride film 14 is harder than the oxide film 13, the silicon nitride film 14 is less likely to be damaged by being disposed on the side in contact with an external member. When the oxide film 13 is disposed between the silicon nitride film 14 and the sensitive layer 12, the oxide film 13 has a lower film stress than the silicon nitride film 14, so that the force transmitted to the sensitive layer 12 can be reduced. [Selection] Figure 3
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/AT-521598-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112639316-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/AT-521598-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020041808-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11486441-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105805161-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016133220-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108757740-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10288113-B2
priorityDate 2012-10-04^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099

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