| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_700fe75857639b7afed2030c9f9e8961 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2013-11-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64f8263b4c569478ae89b935a5baaf05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b0e3a083acfe264de1dfb4db27f61ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21585cf863dc72adf3ff30a12c840992
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cacddb82483724e892733742bea8b7b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e82a179d4bf35ae1cbf7911e354803f9 |
| publicationDate |
2014-06-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2014110431-A |
| titleOfInvention |
Method of growing nitride semiconductor layer and method of manufacturing nitride semiconductor device |
| abstract |
A method for growing a nitride semiconductor layer and a method for manufacturing a nitride semiconductor device are disclosed. A method for growing a nitride semiconductor layer includes preparing a gallium nitride substrate including a non-defect region and a defect region, growing a gallium nitride-based defect dispersion suppression layer on the gallium nitride substrate, and forming the nitride dispersion layer on the defect dispersion suppression layer. Growing a gallium nitride based semiconductor layer. As a result, it is possible to suppress the defect region on the gallium nitride substrate from being dispersed in the gallium nitride based semiconductor layer. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014143255-A |
| priorityDate |
2012-11-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |