| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1476752f2420c8f8eb53464cf7fc922b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-42 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-14538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-02574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-067
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H3-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-8542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-02929 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-09 |
| filingDate |
2015-06-08^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4711cef747b65c660f0373c64b42c45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8701e2da7903b5ce45e2563ed7eca8a5 |
| publicationDate |
2015-10-29^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015188253-A |
| titleOfInvention |
Piezoelectric device |
| abstract |
Provided is a piezoelectric device capable of improving the power durability of an electrode formed on a piezoelectric thin film and greatly reducing the concentration of etching solution and etching time. Of the + C surface 22 on the + Z-axis side of the piezoelectric thin film 20 and the −C surface 12 on the −Z-axis side of the piezoelectric thin film 20, the −C surface 12 on the −Z-axis side of the piezoelectric thin film 20 is etched. Thereby, the −Z surface 21 of the piezoelectric thin film 20 capable of epitaxial growth is exposed. Then, Ti is epitaxially grown in the −Z-axis direction on the −Z surface 21 of the piezoelectric thin film 20 so that the crystal growth surface (001) is parallel to the −Z surface 21 of the piezoelectric thin film 20. Next, Al is epitaxially grown in the −Z-axis direction on the surface of the Ti electrode 65 such that the crystal growth surface (111) is parallel to the −Z plane 21 of the piezoelectric thin film 20. [Selection] Figure 6 |
| priorityDate |
2011-03-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |