http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016004998-A

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filingDate 2015-06-02^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5485e445f9c4250a2d03fe2bb22317c7
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publicationDate 2016-01-12^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2016004998-A
titleOfInvention Gas flow flange for rotating disk reactor for chemical vapor deposition
abstract A gas flow flange for a rotating disk reactor for chemical vapor deposition is provided. A gas flow flange 200 for a rotating disk reactor for chemical vapor deposition is disposed within a first section 202, the first section, and parallel to a top surface of the first section. A plurality of first gas channels 206 and a plurality of second gas channels disposed perpendicular to the top surface of the first section and extending from the top surface of the first section to the bottom surface of the first section. The second section 204 includes a gas channel 210 and a fluid cooling conduit 160. [Selection] Figure 2
priorityDate 2014-06-17^^<http://www.w3.org/2001/XMLSchema#date>
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