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publicationDate 2016-06-09^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2016105492-A
titleOfInvention Crystallization for semiconductor applications
abstract A method of reorganizing a structure of a solid material by subjecting the solid material to a pulse of energy to gradually melt the solid material to form a molten material and recrystallize the molten material. A substrate treatment method identifies a treatment zone of a substrate, and each pulse of a first plurality of laser pulses melts a portion of the treatment zone, and between each pulse of the first plurality of laser pulses. The first plurality of laser pulses being delivered to the treatment zone, wherein each of the second plurality of laser pulses is part of the treatment zone. A second plurality of laser pulses to the treatment zone of the substrate, wherein a period between each of the second plurality of laser pulses is longer than a time to solidify a portion of the melted treatment zone; ,including. [Selection] Figure 1B
priorityDate 2009-11-30^^<http://www.w3.org/2001/XMLSchema#date>
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