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filingDate 2017-03-30^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64376cf9d658bb67679941cf089c2ea3
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publicationDate 2017-10-26^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2017195178-A
titleOfInvention Spin-polarized high-brightness electron-generating photocathode and method for producing the same
abstract An object of the present invention is to provide a spin-polarized high-brightness electron generating photocathode for backside illumination having a simple structure and a method for manufacturing the same. A thin film of a single crystal compound semiconductor having NEA properties is formed on a single crystal substrate having a surface flatness of nanometer. The spin-polarized high-brightness electron-generating photocathode of the present invention can be manufactured using metal organic vapor phase epitaxy. [Selection] Figure 2
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priorityDate 2016-04-15^^<http://www.w3.org/2001/XMLSchema#date>
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