| abstract |
[PROBLEMS] To integrate a crucible, a heat insulating material, a plurality of heating elements, a heat radiating inner diameter, a heat radiating outer diameter, a heat radiating height, and the like to effectively control the heat field and increase the temperature gradient in the system axial direction to achieve high quality. An apparatus used for growing a single crystal can be obtained. An apparatus used for single crystal growth of the present invention includes a crucible, a heat insulating material, and a plurality of heating elements, and the crucible is used for crystal growth of a seed crystal by a material source, and a seed crystal is contained therein. Including an area, a growth chamber, and a material source area, the heat insulating material is installed outside the crucible, a heat dissipating element is installed above the heat insulating material, and the plurality of heating elements are installed outside the heat insulating material. The heat dissipation element includes a heat dissipation inner diameter, a heat dissipation outer diameter, and a heat dissipation height, and the heat dissipation height is greater than the thickness of the heat insulating material. Thereby, the above-mentioned apparatus can manufacture a single crystal of a large size. [Selection] Figure 1A |