| abstract |
The reliability of a semiconductor device is improved. An insulating film (PA) is formed so as to cover a source electrode SE and a gate electrode GE, and an opening (OPS) exposing a part of the source electrode SE and the gate electrode GE are formed in the insulating film (PA). An opening (OPG) that exposes a part of the opening is formed. A plating layer PLS is formed on the source electrode SE exposed from the opening (OPS), and a plating layer PLG is formed on the gate electrode GE exposed from the opening (OPG). A portion of the source electrode SE exposed from the opening (OPS) and the plating layer PLS forms a source pad (PDS), and a portion of the gate electrode GE exposed from the opening (OPG) and the plating layer PLG forms a gate. A pad (PDG) is formed. The area of the gate pad opening (OPG) is smaller than the area of the source pad opening (OPS), and the plating layer PLG is thicker than the plating layer PLS. [Selection] Figure 14 |