http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018133406-A

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publicationDate 2018-08-23^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2018133406-A
titleOfInvention Substrate processing method
abstract Film formation can be performed appropriately by forming a treatment atmosphere in a heat treatment space suitable for the heat treatment process. After evacuating only at time 0 to t1 to exhaust gas in the heat treatment space, nitrogen gas is supplied to the heat treatment space from time t1 to t9 by supplying nitrogen gas. Nitrogen gas is supplied in a state where the heat treatment space is at a negative pressure. Compared to the case where only nitrogen gas is supplied, only exhaust is performed, or nitrogen gas is supplied and exhausted simultaneously. Since the difference between the pressure in the heat treatment space and the supply pressure of the nitrogen gas becomes large, the gas in the heat treatment space can be replaced with nitrogen gas in a short time. Further, since the oxygen concentration in the heat treatment space can be made extremely low, the treatment atmosphere of the heat treatment space in the heat treatment can be suitable for the heat treatment process, and film formation can be performed appropriately. [Selection] Figure 2
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