http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018160493-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate | 2017-03-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f65097b8db5556fab843a9bf2b585acc |
| publicationDate | 2018-10-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2018160493-A |
| titleOfInvention | Semiconductor device and manufacturing method of semiconductor device |
| abstract | Even when a via hole is formed in a shifted manner, a first layer made of titanium is prevented from being eroded when cleaning the inner wall surface of the via hole. A semiconductor device according to an embodiment includes a wiring layer, a side surface protection film, an interlayer insulating film, and a via plug. The wiring layer is disposed on the first layer made of titanium, the second layer made of titanium nitride, and disposed on the second layer, and contains aluminum. And a fourth layer disposed on the third layer and made of titanium nitride. The side surface protective film is disposed on the side surface of the wiring layer and has chemical resistance and electrical conductivity with respect to hydroxylamine. The interlayer insulating film covers the wiring layer and the side surface protective film, and is provided with a via hole. The via plug is disposed in the via hole and is electrically connected to the wiring layer. [Selection] Figure 2 |
| priorityDate | 2017-03-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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