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filingDate 2018-07-05^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be835a103388ce1c8816005f37adda0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c59485851f31050bab7984e3210153a
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publicationDate 2018-11-22^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2018185529-A
titleOfInvention Composition comprising block copolymer and photolithography method
abstract During immersion lithography processing, resist material is reduced from leaking into an immersion fluid in contact with a resist layer. (A) A photoresist composition comprising a block copolymer comprising one or more resins, a photoactive component, and at least three distinct blocks of at least one different from the one or more resins on a substrate. And (b) a method of treating a photoresist composition comprising subjecting the photoresist layer to immersion exposure with radiation that activates the photoresist composition. The one or more block copolymers include a sulfonamide in which a sulfono (SO2) moiety is directly bonded to a nitrogen atom and the nitrogen atom is directly bonded to a hydrogen atom, and further includes one or more photoacid labile groups It is characterized by including. [Selection figure] None
priorityDate 2008-11-19^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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