http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018521457-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2201-3423 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J31-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J29-385 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-3044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B21-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J40-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-956 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J31-50 |
| filingDate | 2016-05-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-08-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2018521457-A |
| titleOfInvention | Photocathode with field emitter array on silicon substrate with boron layer |
| abstract | A photocathode that utilizes a field emitter array (FEA) integrally formed on a silicon substrate to enhance photoelectron emission and a thin boron layer disposed directly on the emission surface of the FEA to prevent oxidation. Field emitters are formed by variously shaped protrusions (eg, pyramids or rounded whiskers) arranged in a two-dimensional periodic pattern and can be configured to operate in reverse bias mode. An additional gate layer is provided to control the emission current. An additional second boron layer is formed on the illuminated surface (top surface) and an additional anti-reflective material layer is formed on the second boron layer. An additional external potential is generated between the illuminated surface and the emission surface behind it. Additional combinations of n-type silicon field emitter and pin photodiode film are formed by a special doping scheme and by applying an external potential. The photocathode forms part of a sensor and inspection system. |
| priorityDate | 2015-05-21^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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