| abstract |
A semiconductor device including an oxide semiconductor film that suppresses a change in electrical characteristics and improves reliability is provided. The transistor includes a conductive film serving as a gate electrode over a substrate, an insulating film over the conductive film, an insulating film over the insulating film, and an oxide semiconductor over the insulating film. The semiconductor device includes the film 108, a conductive film 112 a serving as a source electrode electrically connected to the oxide semiconductor film 108, and a conductive film 112 b serving as a drain electrode electrically connected to the oxide semiconductor film 108. . The oxide semiconductor film 108 includes insulating films 114 and 116 over the conductive films 112a and 112b, a metal oxide film 132 over the insulating film 116, and a metal oxide film 134 over the metal oxide film 132. In addition, the metal oxide film 132 has at least one metal element that is the same as the oxide semiconductor film 108. Further, the metal oxide film 134 has a region mixed with the metal oxide film 132. [Selection diagram] Fig. 1 |