| abstract |
PROBLEM TO BE SOLVED: To provide a single crystal diamond having a reduced dislocation density. SOLUTION: This is a single-layer single-crystal diamond layer formed on a substrate 1 and is provided with a first single-crystal diamond layer 2 including point defects, and the first single-crystal diamond layer 2 is Single crystal diamond 10 having a low dislocation density. The single crystal diamond 10 further comprising a second single crystal diamond layer 3 disposed on the first single crystal diamond layer 2 and having a dislocation density lower than that of the substrate 1. The first single crystal diamond layer 2 is a single crystal diamond 10 containing W, Ta, Re, Fe, Ni, Co, Al, Ga, Ge, Ir or P, and Si and Mo. An ohmic junction is formed with the single crystal diamond 10, the first metal forming the Schottky junction with the second single crystal diamond layer 3, and the first single crystal diamond layer 2 or the second single crystal diamond layer 3. A semiconductor device comprising a second metal. [Selection diagram] Figure 1 |