| abstract |
This application discloses a nitride semiconductor light emitting device and a method for manufacturing the same. The nitride semiconductor light emitting device has an epitaxial structure having a first surface and a second surface opposite to the first surface, wherein the first surface is a (000-1) nitrogen surface, and The second surface is located on the p-type side of the epitaxial structure, the n-type side of the epitaxial structure is in electrical contact with the n-type electrode, and the p-type side is on the p-type electrode. An electrical contact is made and a ridge waveguide structure is formed on the first surface. The nitride semiconductor light emitting device of the present application, in particular, a III-V nitride semiconductor laser or super-emission light emitting diode has advantages such as low resistance, low internal loss, low threshold current, low thermal resistance, good stability and reliability. In addition, the manufacturing process can be easily implemented. [Selection diagram] FIG. |