http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021150593-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_58054227722081749d7e8e121924a5c8 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2020-03-23^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3614970f148b2e72f4f34de19bec87e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea18113f3d40fc79d2e8ec3539d7c07b |
| publicationDate | 2021-09-27^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2021150593-A |
| titleOfInvention | Semiconductor storage device |
| abstract | PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of improving electrical characteristics. A semiconductor storage device of an embodiment includes a semiconductor pillar having a semiconductor layer and extending in a first direction, a first wiring extending in a second direction intersecting the first direction, and the semiconductor pillar. A first electrode arranged between the first wiring and the first electrode is provided. Further, the semiconductor storage device of the embodiment includes a first insulating film arranged between the first electrode and the first wiring so as to be adjacent to the first electrode, and the first insulating film and the first wiring. A second insulating film, which is arranged adjacent to the first insulating film and has a higher dielectric constant than the first insulating film, is provided between the two. The shortest distance between the second insulating film and the semiconductor layer is longer than the shortest distance between the first electrode and the semiconductor pillar. [Selection diagram] Fig. 3 |
| priorityDate | 2020-03-23^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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