http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2022049883-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_58054227722081749d7e8e121924a5c8 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 |
| filingDate | 2020-09-17^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f03b5b29515bd422e529be94b4f4011b |
| publicationDate | 2022-03-30^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2022049883-A |
| titleOfInvention | Magnetic storage device |
| abstract | PROBLEM TO BE SOLVED: To provide a magnetic storage device provided with a magnetoresistive effect element having appropriate characteristics having reliability in the characteristics of the element. In the magnetic storage device according to the embodiment, a plurality of first wirings 10 and a plurality of second wirings 20 are connected in series to a first switching element 32 and a first magnetoresistive effect. A plurality of first memory cells 30 including the element 31, the first switching element connected to the corresponding first wiring, and the first magnetoresistive sensor connected to the corresponding second wiring. The first switching element includes a first lower electrode 32a, a first upper electrode 32b, and a first switching material layer 32c provided between the first lower electrode and the first upper electrode. The first lower electrode contained in the first memory cell adjacent to each other in the first direction is on the first wiring connecting the first memory cells adjacent to each other in the first direction. It is provided continuously. [Selection diagram] Fig. 2B |
| priorityDate | 2020-09-17^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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