http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5209152-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8128 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2012-09-12^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-06-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-06-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-5209152-B1 |
| titleOfInvention | Silicon carbide semiconductor device and manufacturing method thereof |
| abstract | A silicon carbide semiconductor element includes a silicon carbide substrate having a main surface inclined from a (0001) Si surface, a silicon carbide layer disposed on the main surface of the silicon carbide substrate, a silicon carbide layer, a bottom surface, side walls, and A trench including an upper corner region located between the sidewall and the upper surface of the silicon carbide layer; and at least a portion of the sidewall of the trench, at least a portion of the upper corner region, and at least a portion of the upper surface of the silicon carbide layer. A gate electrode disposed on the gate insulating film, the upper corner region including a surface different from the upper surface of the silicon carbide layer and the surface constituting the side wall; The film is in contact with both the first portion located on the upper corner region and the second portion located on the sidewall, and the thickness of the first portion of the gate insulating film is the carbonization of the gate insulating film. Greater than the thickness of the third portion above the upper surface of arsenide layer, the end portion of the gate electrode is located on the upper corner region. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7135302-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9728633-B2 |
| priorityDate | 2011-09-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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