| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0388
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 |
| filingDate |
2011-02-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-12-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2013-12-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-5365651-B2 |
| titleOfInvention |
Chemically amplified negative resist composition and pattern forming method |
| abstract |
A polymer comprising 0.5-10 mol% of recurring units having acid generating capability and 50-99.5 mol% of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition exhibits a high resolution and forms a negative resist pattern of a profile with minimized LER and undercut. |
| priorityDate |
2011-02-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |