http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01217967-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 |
| filingDate | 1988-02-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b5db09ade53c6b882cf2ff6e822f8e9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d5e6f8297ad04bfd5640ddadbe50c9b |
| publicationDate | 1989-08-31^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H01217967-A |
| titleOfInvention | Semiconductor device and its manufacture |
| abstract | PURPOSE: To prevent the deterioration of element characteristics Caused by a phenomenon wherein impurity is doped into a silicon carbide layer via a hetero junction surface, by forming an impurity diffusion protecting layer on a layer containing impurity, and forming thereon the silicon carbide layer. n CONSTITUTION: By diffusing boron in an n-type epitaxial layer 18, a layer 12 containing impurity as a base diffusion layer is formed. After an SiN layer 19 being a field insulating film is formed thereon, a window is bored at an emitter forming part of the SiN layer 19, and an epitaxial layer is formed, which is made an impurity diffusion protecting layer 14. After an SiC layer 11 is grown thereon, it is made an emitter by patterning, and an Al electrode 20 is formed on the SiC layer 11. In a diffusion base type hetero bipolar transistor formed in this manner, the doping of impurity from the layer 12 containing impurity to the SiC layer 11 can be prevented by the epitaxial layer being the impurity diffusion protecting layer 14, so that an intrinsic impurity distribution without diffusion is maintained in the SiC layer, and excellent hetero interface can be obtained. n COPYRIGHT: (C)1989,JPO&Japio |
| priorityDate | 1988-02-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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