http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01218017-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1988-02-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_882053f889a5a2d0ac19be660a423442 |
| publicationDate | 1989-08-31^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H01218017-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE: To flatten a wiring layer without roughening the surface of a substrate by connecting an Si substrate and a wiring metal layer via a TiSi x layer and a TiN layer. n CONSTITUTION: An n + type buried layer 2 and an epitaxial layer 20 are formed in a p - type Si substrate 1; a p + type base diffusion layer 3 and an n + type collector contact layer 4 are formed inside the layer 20. A thermal oxide film 5 and an SiO 2 film 6 are formed; they are etched selectively; contact holes 7 are formed; after that, Ti is sputter-evaporated on the whole surface. Through a heat treatment, Ti inside the holes is reacted with Si; a titanium silicide layer 8 is formed. After the unreacted Ti has been removed, a titanium nitride layer 11 is applied. Diffusion regions 9, 10 are formed by ion implantation; then, Al wiring layers 12-14 are formed. Even when the layers are sputter- evaporated at a high temperature and a high bias in order to flatten the Al wiring layers 12-14, the surface of the substrate is not roughened since the TiSi x layer 4 and the TiN layer 11 exist. A contact resistance value between a wiring part and the substrate is about 10 -6 Ωcm 2 . n COPYRIGHT: (C)1989,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H06326119-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100282711-B1 |
| priorityDate | 1988-02-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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