http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01241169-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 |
| filingDate | 1988-03-23^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc9a1f9fe53e0f08f028e4830fbf580c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e74162f10d03b63c00ab8bf3b57b4b9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74120648200fb96bc51aa7a74b39987c |
| publicationDate | 1989-09-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H01241169-A |
| titleOfInvention | Semiconductor device and manufacture thereof |
| abstract | PURPOSE: To improve the breakdown strength and reliability of emitter and base electrodes of a self-aligned bipolar transistor, by providing a thick polycrystalline silicon film on a spacer between the emitter and base electrodes and forming an insulating film uniformly. n CONSTITUTION: After forming the emitter electrode 2 of a bipolar transistor on a semiconductor substrate 1, this device makes sidewall oxide films 3 protrude from the emitter electrode 2. After depositing a poycrystalline silicon film, As is diffused from the emitter electrode 2 to the polycrystalline silicon film 4 by treating with heat and a highly impurity-concentrated polycrystalline silicon layer 5 is formed on the emitter electrode 2. As diffusion is suppressed upward by the sidewall oxide films 3, the emitter electrode 2 is treated so that only its upper part is impurity-concentrated to a high level. The highly concentrated polycrystalline silicon layer 5 is selectively etched and may have a structure in such a way that oxidation can be easily performed by leaving the polycrystalline silicon film 4 in the form of a chevron on the sidewall oxide films 3 and then, an insulating film 6 is formed uniformly. Thus, defective short circuits between emitter and base electrodes are decreased and a yield rate is improved. n COPYRIGHT: (C)1989,JPO&Japio |
| priorityDate | 1988-03-23^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
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