| abstract |
PURPOSE: To attain low power consumption and the reduction of a layout necessary area by simplifying data lines for constituting a memory array of a static type RAM, etc., and forming a sense amplifier connected selectively to a single end type. n CONSTITUTION: Read-out use data lines Dr0-Drn are precharged to allow level, when a read-out port becomes a non-selective state. A read-out common data lined CDr is precharged to a high level through a P channel precharge MOSFET Q8, when the read-out port becomes a non-selective state, and read-out use Y word lines WYr0-WYrn become a selective state of a high level alternatively prior to read-out use X word lines WXr0-WXrm. Also, a MOSFET Q9 which has a small conductance and becomes a turn-on state continuously while a sense amplifier SA is in an operating state is provided between the line Dr and a power supply voltage. In such a way, the low power consumption can be reduction of a layout necessary can be realized. n COPYRIGHT: (C)1990,JPO&Japio |