http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0251407-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1476752f2420c8f8eb53464cf7fc922b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-87 |
| filingDate | 1988-08-15^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0201717ed9ae5c3ab4a22d45b3dfa69 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_665b6d05a9d9b3cf7c7920db72fe15a1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf6511ca88f80805ccf6f944717df41a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac7bdd174934fbd36f3c4baa780ed886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f130ea66ca74a2e10fb60da2f46bc934 |
| publicationDate | 1990-02-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0251407-A |
| titleOfInvention | Production of thin aluminum nitride film |
| abstract | PURPOSE: To obtain a thin AlN film having high purity by coating a substrate with a soln. contg. an org. compd. of Al and an org. compd. of a rare earth element and by calcining the coated substrate in a nitrogen atmosphere. n CONSTITUTION: An org. compd. of Al such as aluminum ethoxide and an org. compd. of at least one kind of rare earth element such as Y(OC 3 H 7 ) 3 are dissolved in an org. solvent. A substrate is coated with the resulting soln. and this coated substrate is calcined at 1,400-1,600°C in a nitrogen atmosphere to form a thin AlN film having ≤10μm thickness and high heat conductivity on the substrate. n COPYRIGHT: (C)1990,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013181119-A |
| priorityDate | 1988-08-15^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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