http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02831-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-957 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1365 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1365 |
| filingDate | 1988-10-19^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b52e0d267018629669c3ba8fe84a2e15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_994ad4f54752101f5277d70e0020d76c |
| publicationDate | 1990-01-05^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H02831-A |
| titleOfInvention | Active element, and active matrix type electrooptical device formed by using the active element and its production |
| abstract | PURPOSE:To improve a layer for inducing nonlinear electric conduction and to simplify production by using 1st and 2nd conductors and a thin org. film which is crimped by the 1st, 2nd conductors and generates a nonlinear electrical conduction characteristic are constituting elements. CONSTITUTION:The 1st conductor 102, the 2nd conductor 105, and the thin org. film which is crimped by the 1st conductor 102 and the 2nd conductor 105 and generates the nonlinear electrical conduction characteristic between the conductors 102 and 105 are used as the constituting elements. This thin org. film has the specific dielectric constant as small as about 3 to 4 which is <=1/5 the specific dielectric constant of the conventional tantalum pentoxide film formed by an anodic oxidation method. The electrostatic capacity of the same size, therefore, attains an extremely small value of <=1/5 in case of using this thin org. film. The building in of the element having the same film thickness and >=5 times larger area is merely necessitated in this way in case of obtaining the same electrostatic capacity as the electrostatic capacity of the MIM element formed by using the tantalum pentoxide film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9741901-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0431091-U http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8193594-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004093206-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8253910-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6663760-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006520478-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8222077-B2 |
| priorityDate | 1987-12-18^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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