http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0340996-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc97061feea9e6a5ad7e47ab97b8a4aa |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-0548 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-225 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B12-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G3-00 |
| filingDate | 1989-07-10^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71b8ec55dcb242af448d6cffd960a231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c40f2ee840d41e0b44520a61224d0b7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c22a62da072ef3e657b07f38379fac7 |
| publicationDate | 1991-02-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0340996-A |
| titleOfInvention | Ln2-xcexcuo4-y single crystal thin film and its production |
| abstract | PURPOSE: To improve the superconductivity of the produced thin film by vapor- depositing a rare-earth metal, Ce and Cu from separate vaporization sources on the surface of a substrate with an oxygen atmosphere having a relatively high pressure formed in the vicinity of the substrate to be vapor-deposited. n CONSTITUTION: A vacuum vapor-deposition vessel in which a substrate to be vapor-deposited is set is evacuated to a high vacuum of about 10 -6 Torr, then a trace of gaseous O 2 is continuously injected toward the substrate from the vicinity of the substrate, and the pressure of only the gaseous O 2 close to the substrate surface is increased to 10 -2 -10 -1 Torr. Meanwhile, the gas in the vessel is continuously exhausted to control the gaseous O 2 pressure at the greater part in the vessel except the vicinity of the substrate to 10 -5 -10 -3 Torr. Ln (rare- earth element selected from Pr, Nd and Sm), Ce and Cu are vaporized from the respective sources in the atomic ratio of (2-x):x:1 (0.14≤x≤0.18), a power of 50-500W is impressed between the substrate and sources to activate the vaporized metals, and an Ln 2-x Ce x CuO 4-y single crystal thin film consisting solely of a single crystal with the (001) face of the crystal paralleled with the film plane is grown on the substrate. n COPYRIGHT: (C)1991,JPO&Japio |
| priorityDate | 1989-07-10^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977 |
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