| abstract |
PURPOSE: To offer peeling agent compound for resist which has sufficient peeling performance even to a resist pattern which has been deteriorated owing to an etching process or the like by using a compound consisting of specific-ratio organic amine, a certain kind of phosphoric ester surface active agent, 2- butyne-1,4-diol, and glycol monoalkyl ether or a nonprotonic polar solvent. n CONSTITUTION: The peeling agent compound for resist consists of (A) 20 - 90wt.% organic amine, (B) at least one kind of 0.1 - 20wt.% of surface active agent selected from phosphoric ester surface active agents shown by general formulas (I) and (II), (C), 0.1 - 20wt.% of 2-butyne-1,4-diol, and (D) at least one kind of selected from glycol monoalkyl ether and the nonprotonic polar solvent for the rest. The peeling agent compound for resist has the sufficient peeling performance even to the resist pattern which has been deteriorated owing to the etching process and is low in corrosiveness to an aluminum and a copper substrate, etc., in washing and due to moisture absorption. n COPYRIGHT: (C)1992,JPO&Japio |