| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8e6a13e4ae501eb40decf5732cf09c6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-903 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-86 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-68 |
| filingDate |
1991-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7637726db0fe6c0ad68cd0eed83dfe5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbcc019ec7b378b682019d50e088b676 |
| publicationDate |
1992-08-19^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H04230075-A |
| titleOfInvention |
Semiconductor device |
| abstract |
PURPOSE: To realize a stable and reproducible resistor with a high-resistance value, without increasing an area for a semiconductor chip. n CONSTITUTION: A shallow source or drain region 20 is formed by ion injection on a monocrystal silicon substrate 10. The region 20 is a part of an active device, such as a MOSFET or a bipolar transistor. A field oxide layer 30 is formed by oxidation or chemical vapor deposition on the substrate 10 at a portion including the region 20. A contact window 40 is formed by etching within the field oxide layer 30. An insulating layer 50 is formed within the contact window 40. A high-concentration doped contact 60 made of polysilicon is formed within the contact window 40. n COPYRIGHT: (C)1992,JPO |
| priorityDate |
1990-06-19^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |