http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H04292499-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-931 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S117-902 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 |
| filingDate | 1991-03-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f92d6d014da37d5cfff9437add7387bb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_578790fb3de44d3abecb25c8fad6a150 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70d4d673c74d01346bea84401a7bd93a |
| publicationDate | 1992-10-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H04292499-A |
| titleOfInvention | Production of silicon carbide single crystal |
| abstract | PURPOSE: To homogeneously provide a highly pure silicon carbide single crystal in good reproducibility by producing the silicon carbide single crystal using silicon carbide as a raw material by a molecular ray epitaxial growth method. n CONSTITUTION: While a very small volume of argon gas is fed into a vacuum chamber 1 through a gas inlet, the volume of the fed gas and the vacuum- evacuating ability of a vacuum pump are controlled so as to give a vacuum degree of approximately 10 - Torr in the vacuum chamber 1. A molecular ray cell 6 for the silicon carbide of a raw material, a molecular ray cell for Si, and a holder for heating a substrate 4 are heated to approximately 2000°C, approximately 1500°C, and approximately 1800°C, respectively. After the heating a shutter 14 is opened to start the growth of a silicon carbide single crystal on the silicon carbide substrate 4. After approximately 3hr the silicon carbide single crystal grows in a thickness of approximately 3 mm. In the case of the long time growth exceeding the approximately 3 hr growth, the strengths of Si 2 C, SiC 2 and Si molecular rays relating to the Si among the molecular rays from the silicon carbide 5 of the raw material are analyzed, and when the analyzed strengths are low, a shutter 15 is opened to supply Si molecular rays, thereby providing the good growth layer. n COPYRIGHT: (C)1992,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106894090-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106894090-A |
| priorityDate | 1991-03-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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